| PART |
Description |
Maker |
| A29512L-55 A29512L-70 A29512L-90 A29512V-55 A29512 |
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
64K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
64K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
64K X 8 Bit CMOS 5.0 Volt-only Uniform Sector Flash Memory
|
AMICC[AMIC Technology]
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
| 89C536 P89C536 P89C538NBAA P89C536NBAA P89C538NBBB |
CMOS single-chip 8-bit microcontrollers with FLASH program memory
80C51 8-bit microcontroller family 16K/64K/512 FLASH
|
PHILIPS[Philips Semiconductors]
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V，CMOS 512K位整体擦除闪速存储器)
IC-512K FLASH MEMORY
4-bit magnitude comparators 16-PDIP 0 to 70
Quad 2-input exclusive-OR gates 14-PDIP 0 to 70
Decade Counter 14-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70
Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70
Quad bistable latches 16-SOIC 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70
4-bit magnitude comparators 16-SOIC 0 to 70
Quad bistable latches 16-PDIP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70
Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70
8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32
8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32
Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
ER 14C 14#16 PIN RECP LINE
64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
| A29512-70 A29512A-55 A29512A-70 A29512-55 A29040L- |
64K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
512K X 8 Bit CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
|
AMIC Technology
|
| M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system
|
Mitsubishi
|
| A29L008UV-90 A29L008TV-90U A29L008TV-90 A29L008TV- |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory
1M X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory
1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory
From old datasheet system
|
AMICC[AMIC Technology]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
